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| TGC4405 17 - 27 GHz Upconverter Key Features * * * * * * * * * RF Output Frequency Range: 17 - 27 GHz LO Input Frequency Range: 8 -13 GHz IF Input Frequency Range: 0.5 - 3 GHz 13 dB Conversion Gain 28 dBm OTOI 30 dBc LO Isolation Bias: Vd = 5 V, Idq = 425 mA, Vg = -0.5 V Typical Technology: 3MI 0.25 um Power PHEMT Chip Dimensions: 2.07 x 1.93 x 0.1mm Measured Performance 20 18 16 14 12 10 8 6 4 2 0 Vd = 5V, Idq = 425mA, Vmxr = Vdbl = -0.9V IF = 2GHz @ -8dBm, +2dBm LO Primary Applications * * Point-to-Point Radio Ku Band Sat-Com Converion Gain (dB) Product Description The TriQuint TGC4405 is a multifunction chip. It is an upconverter with RF output frequencies of 17 to 27 GHz. It contains a frequency doubler and local oscillator (LO) amplifier, operating at LO Input frequencies of 8 - 13 GHz. The part is designed using TriQuint's 0.25 um 3MI power pHEMT process. The TGC4405 nominally provides 13 dB Conversion Gain and 28 dBm OTOI when operated with LO inputs from 2 - 5 dBm. The part also achieves 30 dBc typical isolation between the fundamental and doubled frequency. The TGC4405 is ideally suited for low cost markets such as Point-to-Point Radio, and Ku-band Satellite Communications. The TGC4405 is 100% DC and RF tested on-wafer to ensure performance compliance. The TGC4405 has a protective surface passivation layer providing environmental robustness. Lead-Free & RoHS compliant Upper Side Band Lower Side Band 17 18 19 20 21 22 23 24 25 26 27 RF Output Frequency (GHz) 34 32 30 28 26 24 22 20 18 16 14 Vd = 5V, Idq = 425mA, Vmxr = Vdbl = -0.9V IF = 2GHz +/- 5MHz @ -8dBm Input/Tone, +2dBm LO OTOI (dBm) 18 19 20 21 22 23 24 25 26 27 28 RF Output Frequency (GHz) Datasheet subject to change without notice. 1 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Oct 2006 (c) Rev - TGC4405 Table I Absolute Maximum Ratings 1/ Symbol Vd-Vg Vd Vmxr Vdbl Vg Id Ig Imxr Idbl PinLO PinIF 1/ Parameter Drain to Gate Voltage Drain Supply Voltage Mixer Supply Voltage Range Doubler Supply Voltage Range Gate Supply Voltage Range Drain Supply Current Gate Supply Current Range Mixer Supply Current Range Doubler Supply Current Range LO Input Continuous Wave Power IF Input Continuous Wave Power Value 12 V 8V -5 to 0 V -5 to 0 V -5 to 0 V 817 mA -3.3 to 56.7 mA -0.75 to 10.5 mA -0.6 to 16.8 mA 18 dBm 21 dBm Notes 2/ 2/ 2/ 2/ These ratings represent the maximum operable values for this device. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device and / or affect device lifetime. These are stress ratings only, and functional operation of the device at these conditions is not implied. Combinations of supply voltage, supply current, input power, and output power shall not exceed Pd (as listed in "Thermal Information"). 2/ Table II Recommended Operating Conditions Symbol Vd Idq Vg Vmxr Vdbl Drain Voltage Drain Current Gate Voltage Mixer Voltage Doubler Voltage Parameter Value 5V 425 mA -0.5 V, typical -0.9 V -0.9 V See assembly diagram for bias instructions. 2 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Oct 2006 (c) Rev - TGC4405 Table III RF Characterization Table Bias: Vd = 5 V, Idq = 425 mA, Vmxr = Vdbl = -0.9V, Vg = -0.5V Typical SYMBOL FLO FIF Gain ORL OTOI LO_Isol PARAMETER LO Input Frequency Range IF Input Frequency Range Conversion Gain Output Return Loss Output Third Order Intercept @ IF Input = -8dBm/Tone LO Isolation TEST CONDITIONS NOMINAL 8 - 13 0.5 - 3 UNITS GHz GHz dB dB dBm dBc f = 17 - 27 GHz f = 17 - 27 GHz f = 17 - 27 GHz f = 17 - 27 GHz 13 -10 28 30 3 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Oct 2006 (c) Rev - TGC4405 Table IV Power Dissipation and Thermal Properties Parameter Maximum Power Dissipation Test Conditions Tbaseplate = 70 C Value Pd = 2.9 W Tchannel = 150 C Tm = 1.0E+6 Hrs jc = 27.4 (C/W) Tchannel = 128 C Tm = 7E+6 Hrs 320 C -65 to 150 C Notes 1/ 2/ Thermal Resistance, jc Vd = 5 V Id = 425 mA Pd = 2.13 W 30 Seconds Mounting Temperature Storage Temperature 1/ 2/ For a median life of 1E+6 hours, Power Dissipation is limited to Pd(max) = (150 C - Tbase C)/jc. Channel operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that channel temperatures be maintained at the lowest possible levels. 7 6 Power Dissipated (W) 5 4 3 2 1 0 Power De-rating Curve Tm= 1.0E+6 Hrs -50 -25 0 25 50 75 100 125 150 175 Baseplate Temp (C) 4 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Oct 2006 (c) Rev - TGC4405 Measured Data Vd = 5V, Idq = 425mA, Vmxr = Vdbl = -0.9V IF = 2GHz @ -8dBm, +2dBm LO 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 14 15 16 17 Converion Gain (dB) Upper Side Band Lower Side Band 18 19 20 21 22 23 24 RF Output Frequency (GHz) 25 26 27 28 Vd = 5V, Idq = 425mA, Vmxr = Vdbl = -0.9V IF = 2GHz +/- 5MHz @ -8dBm Input/Tone, +2dBm LO 34 32 30 28 26 24 22 20 18 16 14 12 10 8 6 4 14 15 16 17 18 19 20 21 22 23 OTOI (dBm) Upper Side Band Lower Side Band 24 25 26 27 28 RF Output Frequency (GHz) 5 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Oct 2006 (c) Rev - TGC4405 Measured Data 10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 8 Vd = 5V, Idq = 425mA, Vmxr = Vdbl = -0.9V IF = 2GHz @ -8dBm, +2dBm LO Output Power (dBm) 1x LO Frequency 2x LO Frequency 3x LO Frequency 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 LO Frequency (GHz) Vd = 5V, Idq = 425mA, Vmxr = Vdbl = -0.9V IF = 2GHz @ -8dBm, +2dBm LO 20 19 18 Noise Figure (dB) 17 16 15 14 13 12 11 10 17 18 19 20 21 22 23 24 6 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Oct 2006 (c) Rev - Lower Side Band Upper Side Band RF Output Frequency (GHz) TGC4405 Measured Data Swept LO Power Vd = 5V, Idq = 425mA, Vmxr = Vdbl = -0.9V IF = 2GHz @ -8dBm, LO Frequency = 20GHz 16 15 14 13 12 11 10 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 LO Power (dBm) Swept IF @ -8dBm Vd = 5V, Idq = 425mA, Vmxr = Vdbl = -0.9V RF Frequency = 21GHz, +2dBm LO Conversion Gain (dB) Upper Side Band Lower Side Band 16 15 Conversion Gain (dB) 14 13 12 11 10 0.5 0.75 Upper Side Band Lower Side Band 1 1.25 1.5 1.75 2 2.25 2.5 2.75 3 7 IF Frequency (GHz) TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Oct 2006 (c) Rev - TGC4405 Electrical Schematic 100 pF 0.01 uF 1 uF Vd 100 pF Resistive FET Mixer + Baluns 1 uF Vmxr RF Amplifier IF In 15 2xLO Buffer RF Out 100 pF 1 uF Vg Doubler TGC4405 100 pF 1 uF Vdbl LO In Bias Procedures Bias-up Procedure *Vg set to -1.5 V *Vd set to +5 V *Vmxr set to -0.9V *Vdbl set to -0.9 V *Adjust Vg more positive until Idq is 425 mA. This will be ~ Vg = -0.5 V *Apply signals to LO and IF input 8 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Oct 2006 (c) Rev - Bias-down Procedure *Turn off signals *Reduce Vg to -1.5V. Ensure Id ~ 0 mA *Turn Vdbl to 0V *Turn Vmxr to 0V *Turn Vd to 0V *Turn Vg to 0V TGC4405 Mechanical Drawing 0.456 1.454 6 0.130 1.930 1.842 3 4 1.183 5 1.233 2 1.767 7 8 0.705 0.095 0.0 1 10 9 0.0 0.095 0.418 0.703 Units: millimeters Thickness: 0.10 Die x,y size tolerance: +/- 0.05 Chip edge to bond pad dimensions are shown to center of pad Ground is backside of die Bond Pad #1 Bond Pad #2 Bond Pad #3 Bond Pad #4 Bond Pad #5 LO In IF In RF Out Vd Vd 0.100 x 0.100 0.100 x 0.150 0.170 x 0.085 0.085 x 0.085 0.085 x 0.085 Bond Pad #6 Bond Pad #7 Bond Pad #8 Bond Pad #9 Bond Pad #10 1.834 2.068 Vg Vmxr Vd Vg Vdbl 0.085 x 0.085 0.085 x 0.085 0.081 x 0.081 0.081 x 0.081 0.081 x 0.081 GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 9 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Oct 2006 (c) Rev - TGC4405 Recommended Assembly Diagram RF Out 100 pF 0.01 F Vd = 5V 1 F 100 pF Vmxr = -0.9V 1 F IF In 100 pF 100 pF 15 1 F Vg ~ -0.5V for Idq = 425mA 1 F LO In Vdbl = -0.9V Vmxr and Vdbl can be connected together GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 10 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Oct 2006 (c) Rev - TGC4405 Assembly Notes Component placement and adhesive attachment assembly notes: 1. 2. 3. 4. 5. Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment (i.e. epoxy) can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Reflow process assembly notes: 1. 2. 3. 4. 5. Use AuSn (80/20) solder and limit exposure to temperatures above 300C to 3-4 minutes, maximum. An alloy station or conveyor furnace with reducing atmosphere should be used. Do not use any kind of flux. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Interconnect process assembly notes: 1. 2. 3. 4. Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Devices with small pad sizes should be bonded with 0.0007-inch wire. Ordering Information Part TGC4405 Package Style GaAs MMIC Die GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 11 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Oct 2006 (c) Rev - |
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